Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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 == SEM pictures of dosepatterns ==
+=== wafer 6.13 ===
+{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
+|-
+|-
+|-style="background:Black; text-align:left; color:White"
+!Process
+!Equipment
+!Parameters
+!Date and initials
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+|Resist
+|Fumehood D-3
+|AR-P 6200/2 AllResist E-beam resist diluted 1:1 in anisole
+|TIGRE
+|-
+|-style="background:WhiteSmoke; color:black"
+|Spin Coat
+|Spin Coater LabSpin A-5
+|1 min @ X000 rpm, 2000 1/s2, softbake X min @ 150 degC, thickness ~XXnm
+|TIGRE
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+|E-beam exposure
+|JEOL 9500 E-2
+|0.2 nA, aperture 5, dose 207-242 muC/cm2, SHOT A,14
+|TIGRE
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+|Develop
+|Fumehood D-3
+|SX-AR 600-54/6 60 sec, 30 sec IPA rinse
+|TIGRE
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+|Sputter Coat
+|Cressington 208HR, DTU CEN
+|3-5 nm Pt, sputtering
+|TIGRE
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+|Characterization
+|Zeiss SEM Supra 60VP, D-3
+|3 kV, WD below 4mm, conducting tape close to pattern
+|TIGRE
+|-
+|}
 The e-beam exposures presented here are written with 'SHOT A,10', i.e. a shot pitch of 5nm; this pitch works very well for large structures but not so well for 20nm or below. To illustrate this, ACHK screenshot are presented along with SEM inspection picures.