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Specific Process Knowledge/Wafer cleaning/RCA: Difference between revisions

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[[Image:RCA-bænk_RR2_0.JPG|300x300px|thumb|RCA bench: positioned in cleanroom B1. <br /> RCA1 - RCA2 - HF - BHF(pre-dep wafers)]]
[[Image:RCA-bænk_RR2_0.JPG|300x300px|thumb|RCA bench: positioned in cleanroom B1. <br /> RCA1 - RCA2 - HF - BHF(pre-dep wafers)]]


The RCA clean is used for cleaning the wafers before taking them into the furnaces and a few other equipments (check the cross contamination sheet).
The RCA clean is used for cleaning wafers before taking them into the furnaces and a few other equipments (check the cross contamination sheet).
It consists of two solutions: RCA1 and RCA2 plus diluted HF. A crucial part of the RCA clean is the oxidation by H<sub>2</sub>O<sub>2</sub>. Therefore the life time of the RCA solutions are limited by the presence of the H<sub>2</sub>O<sub>2</sub> which is highly volatile at 70 <sup>o</sup>C.
It consists of two solutions (RCA1 and RCA2) and diluted HF. A crucial part of the RCA cleaning procedure is the oxidation by H<sub>2</sub>O<sub>2</sub> at elevated temperatures. Therefore, the lifetime of RCA1 and RCA2 solutions after preparation is limited because H<sub>2</sub>O<sub>2</sub> decomposes at 70<sup>o</sup>C.


*The RCA1 contains: H<sub>2</sub>O, NH<sub>4</sub>OH and H<sub>2</sub>O<sub>2</sub> (5:1:1). It is used for removal of light organics, particles and metals. <br \>
*RCA1 contains: H<sub>2</sub>O, NH<sub>4</sub>OH and H<sub>2</sub>O<sub>2</sub> (5:1:1). It is used for removal of light organics, particles and metals.<br>
*The RCA2 contains: H<sub>2</sub>O, HCl and H<sub>2</sub>O<sub>2</sub> (5:1:1). It is used for removal of alkalis, metal hydroxides, and residual metals.
*RCA2 contains: H<sub>2</sub>O, HCl and H<sub>2</sub>O<sub>2</sub> (5:1:1). It is used for removal of alkalis, metal hydroxides, and residual metals.<br>


You can find the APV [http://d4.danchip.dtu.dk/#DokID=1916 here]
You can find the APV for the RCA bench [http://labmanager.dtu.dk/d4Show.php?id=1916&mach=243 here]


===RCA procedure===
===RCA procedure===
*RCA1: 10 min
*'''RCA1: 10 min'''
*DI water rinsing (dumping three times)
*DI water rinsing (dumping three times)
*HF: 30 sec (you may avoid this step in case of a very thin oxide (0-200 Å) as the top layer)
*HF: 30 sec (you may avoid this step in case of a very thin oxide (0-200 Å) as the top layer)
*DI water rinsing (bubler)
*DI water rinsing (bubbler)<br>
*RCA2: 10 min
*'''RCA2: 10 min'''
*DI water rinsing (dumping three times)
*DI water rinsing (dumping three times)
*Optional: HF: 30 sec (avoid it if you have a very thin oxide (0-200 Å) as the top layer)
*Optional: HF: 30 sec (avoid it if you have a very thin oxide (0-200 Å) as the top layer)
*DI water rinsing (bubler)
*DI water rinsing (bubbler)<br>
For procedure details please look in the [http://labmanager.danchip.dtu.dk/d4Show.php?id=1633&mach=243 user manual] in LabManager.
For procedure details please look in the [http://labmanager.danchip.dtu.dk/d4Show.php?id=1633&mach=243 user manual] in LabManager.


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