Specific Process Knowledge/Lithography/mrEBL6000: Difference between revisions
No edit summary |
|||
Line 155: | Line 155: | ||
|2000 | |2000 | ||
|2000 | |2000 | ||
| | |101.93 | ||
| | |0.81 | ||
|- | |- | ||
Line 163: | Line 163: | ||
|3000 | |3000 | ||
|2000 | |2000 | ||
| | |87.19 | ||
| | |0.77 | ||
|- | |- | ||
Line 171: | Line 171: | ||
|4000 | |4000 | ||
|2000 | |2000 | ||
| | |76.88 | ||
| | |0.5 | ||
|- | |- | ||
Line 179: | Line 179: | ||
|5000 | |5000 | ||
|2000 | |2000 | ||
| | |71.18 | ||
| | |0.57 | ||
|- | |- | ||
Line 187: | Line 187: | ||
|6000 | |6000 | ||
|2000 | |2000 | ||
| | |69.12 | ||
| | |0.53 | ||
|- | |- | ||
|} | |} |
Revision as of 14:32, 14 July 2014
Resist | Polarity | Manufacturer | Comments | Technical reports | Spinner | Developer | Rinse | Remover | Process flows (in docx-format) |
mr EBL 6000.1 | Positive | MicroResist | Standard negative resist | mrEBL6000 processing Guidelines.pdf | Manual Spinner 1 (Laurell), Spin Coater Labspin | mr DEV | IPA | mr REM | Process_Flow_mrEBL6000.docx |
Process Flow
Test of mr EBL 6000.1; a negative e-beam resist from MicroResist.
Equipment | Process Parameters | Comments | |
---|---|---|---|
Pretreatment | |||
4" Si wafers | 1 min @ 110 degC, hotplate | ||
Spin Coat | |||
Spin Coater Manual, LabSpin, A-5 | mr EBL 6000.1 E-beam resist
60 sec at various spin speed. Acceleration 2000 s-2, softbake 3 min at 110 deg Celcius |
Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. | |
Characterization | |||
Ellipsometer VASE B-1 | 9 points measured on 100 mm wafer | ZEP program used; measured at 70 deg only | |
E-beam Exposure | |||
JEOL 9500 E-beam writer, E-1 | Dosepattern 15nm - 100nm,
dose 120-280 muC/cm2 |
Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array | |
Development | |||
Fumehood, D-3 | 60 sec in
60 sec rinse in IPA, N2 Blow dry |
Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun. | |
Characterization | |||
Zeiss SEM Supra 60VP, D-3 | 2-3 kV, shortest working distance possible, chip mounted with Al tape | The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact Ramona Valentina Mateiu for further information. |
Spin Curve
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
MicroResist mr EBL 6000 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 14-07-2014. Softbake 3 min @ 110 degC. | ||||||
---|---|---|---|---|---|---|
Spin Speed [rpm] | Acceleration [1/s2] | Thickness [nm] | St Dev | |||
2000 | 2000 | 101.93 | 0.81 | |||
3000 | 2000 | 87.19 | 0.77 | |||
4000 | 2000 | 76.88 | 0.5 | |||
5000 | 2000 | 71.18 | 0.57 | |||
6000 | 2000 | 69.12 | 0.53 |