Specific Process Knowledge/Lithography/mrEBL6000: Difference between revisions
No edit summary |
|||
| Line 33: | Line 33: | ||
== Process Flow == | == Process Flow == | ||
Test of | Test of mr EBL 6000.1; a negative e-beam resist from MicroResist. | ||
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;" | {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;" | ||
| Line 54: | Line 54: | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
|4" Si wafers | |4" Si wafers | ||
| | |1 min @ 110 degC, hotplate | ||
| | | | ||
|- | |- | ||
| Line 67: | Line 67: | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
|Spin Coater Manual, LabSpin, A-5 | |Spin Coater Manual, LabSpin, A-5 | ||
| | |mr EBL 6000.1 E-beam resist | ||
60 sec at various spin speed. | 60 sec at various spin speed. | ||
Acceleration | Acceleration 2000 s-2, | ||
softbake | softbake 3 min at 110 deg Celcius | ||
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice | |Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. | ||
|- | |- | ||
| Line 108: | Line 108: | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
|Fumehood, D-3 | |Fumehood, D-3 | ||
|60 sec in | |60 sec in | ||
60 sec rinse in IPA, | 60 sec rinse in IPA, | ||
N2 Blow dry | N2 Blow dry | ||
| Line 127: | Line 127: | ||
|} | |} | ||
== Spin Curve == | == Spin Curve == | ||
Revision as of 12:49, 14 July 2014
| Resist | Polarity | Manufacturer | Comments | Technical reports | Spinner | Developer | Rinse | Remover | Process flows (in docx-format) |
| mr EBL 6000 | Positive | MicroResist | Standard negative resist | mrEBL6000 processing Guidelines.pdf | Manual Spinner 1 (Laurell), Spin Coater Labspin | mr DEV | IPA | Process_Flow_mrEBL6000.docx |
Process Flow
Test of mr EBL 6000.1; a negative e-beam resist from MicroResist.
| Equipment | Process Parameters | Comments | |
|---|---|---|---|
| Pretreatment | |||
| 4" Si wafers | 1 min @ 110 degC, hotplate | ||
| Spin Coat | |||
| Spin Coater Manual, LabSpin, A-5 | mr EBL 6000.1 E-beam resist
60 sec at various spin speed. Acceleration 2000 s-2, softbake 3 min at 110 deg Celcius |
Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. | |
| Characterization | |||
| Ellipsometer VASE B-1 | 9 points measured on 100 mm wafer | ZEP program used; measured at 70 deg only | |
| E-beam Exposure | |||
| JEOL 9500 E-beam writer, E-1 | Dosepattern 15nm - 100nm,
dose 120-280 muC/cm2 |
Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array | |
| Development | |||
| Fumehood, D-3 | 60 sec in
60 sec rinse in IPA, N2 Blow dry |
Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun. | |
| Characterization | |||
| Zeiss SEM Supra 60VP, D-3 | 2-3 kV, shortest working distance possible, chip mounted with Al tape | The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact Ramona Valentina Mateiu for further information. | |
Spin Curve
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
| MicroResist mr EBL 6000 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 14-07-2014. Softbake 3 min @ 110 degC. | ||||||
|---|---|---|---|---|---|---|
| Spin Speed [rpm] | Acceleration [1/s2] | Thickness [nm] | St Dev | |||
| 2000 | 2000 | |||||
| 3000 | 2000 | |||||
| 4000 | 2000 | |||||
| 5000 | 2000 | |||||
| 6000 | 2000 | |||||