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Specific Process Knowledge/Lithography/mrEBL6000: Difference between revisions

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== Process Flow ==
== Process Flow ==
Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).
Test of mr EBL 6000.1; a negative e-beam resist from MicroResist.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|4" Si wafers
|4" Si wafers
|No Pretreatment
|1 min @ 110 degC, hotplate
|
|
|-
|-
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|Spin Coater Manual, LabSpin, A-5
|AR-P 6200/2 AllResist E-beam resist
|mr EBL 6000.1 E-beam resist
60 sec at various spin speed.
60 sec at various spin speed.
Acceleration 4000 s-2,  
Acceleration 2000 s-2,  
softbake 1 - 5 min at 150 deg Celcius
softbake 3 min at 110 deg Celcius
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist [[media:Softbake CSAR.pdf|here]].
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice.  
|-
|-


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|Fumehood, D-3
|Fumehood, D-3
|60 sec in X AR 600-54/6,
|60 sec in  
60 sec rinse in IPA,  
60 sec rinse in IPA,  
N2 Blow dry
N2 Blow dry
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|}
|}


== Spin Curve ==
== Spin Curve ==