Specific Process Knowledge/Lithography/mrEBL6000: Difference between revisions
Appearance
No edit summary |
|||
| Line 33: | Line 33: | ||
== Process Flow == | == Process Flow == | ||
Test of | Test of mr EBL 6000.1; a negative e-beam resist from MicroResist. | ||
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;" | {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;" | ||
| Line 54: | Line 54: | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
|4" Si wafers | |4" Si wafers | ||
| | |1 min @ 110 degC, hotplate | ||
| | | | ||
|- | |- | ||
| Line 67: | Line 67: | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
|Spin Coater Manual, LabSpin, A-5 | |Spin Coater Manual, LabSpin, A-5 | ||
| | |mr EBL 6000.1 E-beam resist | ||
60 sec at various spin speed. | 60 sec at various spin speed. | ||
Acceleration | Acceleration 2000 s-2, | ||
softbake | softbake 3 min at 110 deg Celcius | ||
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice | |Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. | ||
|- | |- | ||
| Line 108: | Line 108: | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
|Fumehood, D-3 | |Fumehood, D-3 | ||
|60 sec in | |60 sec in | ||
60 sec rinse in IPA, | 60 sec rinse in IPA, | ||
N2 Blow dry | N2 Blow dry | ||
| Line 127: | Line 127: | ||
|} | |} | ||
== Spin Curve == | == Spin Curve == | ||