Specific Process Knowledge/Lithography/mrEBL6000: Difference between revisions
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== Process Flow == | |||
Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2). | |||
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!Process Parameters | |||
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!colspan="4"|Pretreatment | |||
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|4" Si wafers | |||
|No Pretreatment | |||
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!colspan="4"|Spin Coat | |||
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|Spin Coater Manual, LabSpin, A-5 | |||
|AR-P 6200/2 AllResist E-beam resist | |||
60 sec at various spin speed. | |||
Acceleration 4000 s-2, | |||
softbake 1 - 5 min at 150 deg Celcius | |||
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist [[media:Softbake CSAR.pdf|here]]. | |||
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!colspan="4"|Characterization | |||
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|Ellipsometer VASE B-1 | |||
|9 points measured on 100 mm wafer | |||
|ZEP program used; measured at 70 deg only | |||
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!colspan="4"|E-beam Exposure | |||
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|JEOL 9500 E-beam writer, E-1 | |||
|Dosepattern 15nm - 100nm, | |||
dose 120-280 muC/cm2 | |||
|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array | |||
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!colspan="4"|Development | |||
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|Fumehood, D-3 | |||
|60 sec in X AR 600-54/6, | |||
60 sec rinse in IPA, | |||
N2 Blow dry | |||
|Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun. | |||
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!colspan="4"|Characterization | |||
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|Zeiss SEM Supra 60VP, D-3 | |||
|2-3 kV, shortest working distance possible, chip mounted with Al tape | |||
|The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information. | |||
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== Spin Curve == | |||
[[File:SpinCurveMrEBL6000.jpg|right|600px]] | [[File:SpinCurveMrEBL6000.jpg|right|600px]] | ||