Specific Process Knowledge/Lithography/Espacer: Difference between revisions

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We have Espacer in stock and approved for use in the cleanroom. You can find a guideline for a process flow here: [[media:Process Flow CSAR+ESPACER.docx‎|Process Flow CSAR+ESPACER.docx‎]]. Technical information of Espacer can be found here: [[media:Espacer_300_Technical_Info.pdf‎|Espacer_300_Technical_Info.pdf‎]], [[media:Espacer_catalog.pdf‎|Espacer_catalog.pdf‎]].
We have Espacer in stock and approved for use in the cleanroom. You can find a guideline for a process flow here: [[media:Process Flow CSAR+ESPACER.docx‎|Process Flow CSAR + ESPACER.docx‎]]. Technical information of Espacer can be found here: [[media:Espacer_300_Technical_Info.pdf‎|Espacer_300_Technical_Info.pdf‎]], [[media:Espacer_catalog.pdf‎|Espacer_catalog.pdf‎]].


Please contact [mailto:lithography@danchip.dtu.dk Lithography] if you wish to use this material.
Please contact [mailto:lithography@danchip.dtu.dk Lithography] if you wish to use this material.

Revision as of 16:04, 31 October 2014

Espacer is a chemical that works as a discharging layer when e-beam writing on a non-conducting wafer; it is spun onto the wafer on top of the resist and easily rinsed off the wafer after e-beam exposure.


All substrates are grounded to the e-beam cassette when properly loaded. On a non-conducting substrate, the accumulation of charges in the substrates will however destroy the e-beam patterning. To avoid this, a charge dissipating layer is added on top of the e-beam resist; this will provide a conducting layer for the electrons to escape, while high-energy electrons will pass through the layer to expose the resist.


We have Espacer in stock and approved for use in the cleanroom. You can find a guideline for a process flow here: Process Flow CSAR + ESPACER.docx‎. Technical information of Espacer can be found here: Espacer_300_Technical_Info.pdf‎, Espacer_catalog.pdf‎.

Please contact Lithography if you wish to use this material.


Process No ESPACER ESPACER
Wafer Borofloat 4" wafers (JB456), no pretreatment
Resist AR-P 6200/2 AllResist E-beam resist
Spin Coat 1 min @ 4000 rpm, softbake 2 min @ 150 degC, thickness ~140nm
ESPACER 1 min @ 2000 rpm (no softbake), Manual Spinner 1 (Laurell)
E-beam exposure 2 nA, aperture 5, dose 150-310 muC/cm2, SHOT (A,10)
Rinse Rinsed with hand shower in fumehood, dried with N2 gun
Developing SX-AR 600-54/6 60 sec, 60 sec IPA rinse
Characterization Nikon ECLIPSE optical microscope, E-5
All doses
230 muC/cm2
219 muC/cm2
Sputter Coated <10nm Pt at DTU CEN
Characterization Zeiss SEM supra 60VP, D-2
230 muC/cm2