Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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-CSAR is a chemically semi-amplified positiove e-beam resist from AllResist.
-{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
+{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="90%"
 |-
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 |[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]]
 |X AR 600-54/6, MIBK:IPA
-|IPA, H2O
+|IPA
 |
 |[[media:Process_Flow_CSAR.docx‎|Process_Flow_CSAR.docx‎]]
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-These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.
+Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.