Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

Revision as of 11:15, 26 October 2010

Jipelec - Rapid Thermal Processing

The Jipelec is a rapid thermal processing oven. It should be used for fast and well-controlled annealing or alloying of samples. It is possible to use a pyrometer to control the temperature (of the carrier).

Process parameter ranges	Process Temperature	0-1000 degree Celsius
Process parameter ranges	Process pressure	atmosphere pressure vacuum
Performance	Substrate material allowed	Silicon Silicon oxides Silicon nitrides Quartz Polysilicon Titan III-V materials (on graphite carrier)
Performance	Allowed materials on substrate

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+==Jipelec - Rapid Thermal Processing==
 [[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom 1]]
+The Jipelec is a rapid thermal processing oven. It should be used for fast and well-controlled annealing or alloying of samples. It is possible to use a pyrometer to control the temperature (of the carrier).
+{| border="2" cellspacing="0" cellpadding="10"
+|-
+!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter ranges
+|style="background:LightGrey; color:black"|Process Temperature
+|style="background:WhiteSmoke; color:black"|
+*0-1000 degree Celsius
+|-
+|style="background:LightGrey; color:black"|Process pressure
+|style="background:WhiteSmoke; color:black"|
+*atmosphere pressure
+*vacuum
+|-
+!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
+| style="background:LightGrey; color:black"|Substrate material allowed
+|style="background:WhiteSmoke; color:black"|
+*Silicon
+*Silicon oxides
+*Silicon nitrides
+*Quartz
+*Polysilicon
+*Titan
+*III-V materials (on graphite carrier)
+|-
+|style="background:LightGrey; color:black"|Allowed materials on substrate
+|style="background:WhiteSmoke; color:black"|
+*
+|-
+|}