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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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CSAR is a chemically semi-amplified positiove e-beam resist from AllResist.
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
|-
|-
|-style="background:silver; color:black"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''
|-
|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR]]'''
|Positive
|AllResist
|Standard positive resist, approved, very similar to ZEP520. Currently under test.
|[[media:CSAR_62_and_process_chemicals.pdf‎|CSAR_62_and_process_chemicals.pdf‎]], [[media:CSAR_62_Abstract_Allresist.pdf‎|CSAR_62_Abstract_Allresist.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]]
|X AR 600-54/6, MIBK:IPA
|IPA, H2O
|
|[[media:Process_Flow_CSAR.docx‎|Process_Flow_CSAR.docx‎]]
|}
These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.
These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.