Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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|-style="background:Black; text-align:left; color:White" | |-style="background:Black; text-align:left; color:White" | ||
!Process | !Process | ||
! | !No ESPACER | ||
!ESPACER | |||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|Resist | |Resist | ||
|AR-P 6200/2 AllResist E-beam resist | |colspan="2"| AR-P 6200/2 AllResist E-beam resist | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|Spin Coat | |Spin Coat | ||
|1 min @ | |colspan="2"|1 min @ 4000 rpm, 2000 1/s2, softbake 1 min @ 150 degC, thickness ~140nm | ||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|ESPACER | |||
| | |||
|1 min @ 2000 rpm (no softbake) | |||
|- | |- | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|E-beam exposure | |E-beam exposure | ||
| | |colspan="2"|2 nA, aperture 5, dose 207-242 muC/cm2, SHOT A,10 | ||
|- | |- | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|Developing | |Developing | ||
|SX-AR 600-54/6 60 sec, 60 sec IPA rinse | |colspan="2"|SX-AR 600-54/6 60 sec, 60 sec IPA rinse | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|Characterization | |Characterization | ||
|Nikon ECLIPSE optical microscope, E-5 | |colspan="2"|Nikon ECLIPSE optical microscope, E-5 | ||
|- | |- | ||