Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
|JEOL 9500 E-beam writer, E-1 | |JEOL 9500 E-beam writer, E-1 | ||
|Dosepattern | |Dosepattern 15nm - 100nm, | ||
dose 120-280 muC/cm2 | dose 120-280 muC/cm2 | ||
|Virtual chip mark height detection (CHIPAL V1) | |Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array | ||
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| Line 81: | Line 81: | ||
60 sec rinse in IPA, | 60 sec rinse in IPA, | ||
N2 Blow dry | N2 Blow dry | ||
| | |Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun. | ||
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