Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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Acceleration 4000 s-2, | Acceleration 4000 s-2, | ||
softbake 1 - 5 min at 150 deg Celcius | softbake 1 - 5 min at 150 deg Celcius | ||
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist [[media:Softbake CSAR.pdf here]]. | |Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist [[media:Softbake CSAR.pdf|here]]. | ||
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