Specific Process Knowledge/Doping: Difference between revisions
| Line 11: | Line 11: | ||
*[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass | *[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass | ||
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySilicon]] - Deposition of PolySi doped with B or P | |||
*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Dope with Boron]] - Doping Silicon wafers with boron by thermal predeposition and drive-in | |||
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]] - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in | |||
[[/Deposition of silicon nitride using LPCVD|Process description using method 1]] | [[/Deposition of silicon nitride using LPCVD|Process description using method 1]] | ||