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| *[[/Critical Point Dryer|Critical Point Dryer]] | | *[[/Critical Point Dryer|Critical Point Dryer]] |
| *[[/Spin Dryers|Spin Dryers]] | | *[[/Spin Dryers|Spin Dryers]] |
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| === Spin dryers ===
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| [[image:spin-rinser-dryer-white.jpg|200x200px|right|thumb|Image(s) of the equipment(s)]]
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| A tool used for drying wafers.
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| A single cassette of wafers is placed in a stainless steel rotor. The wafers are centered just off the axis of rotation, and rotated at high RPM so that centrifugal force “locks” the wafers in place.
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| Some of the tools have DI water connected, and can be used for both rinsing and drying of wafers, while other tools do not and can only be used for drying.
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| All wafers have to be washed in a wetbench cleaning station before going into the spin dryer, regardless of using the rinse function or not.
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| '''The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=156 LabManager]'''
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| == Process information == | | == Process information == |
Revision as of 07:35, 1 July 2014
Feedback to this page: click here
Drying Comparison Table
Equipment
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Spin dryer 1
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Spin dryer 2
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Spin dryer 3
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Spin dryer 4
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Critical point dryer
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Location
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Purpose
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- Drying sensitive samples. E.g. with cantilevers
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Substrates
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Batch size
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- # 100 mm wafers
- # 150 mm wafers
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- # 50 mm wafers
- # 100 mm wafers
- # 150 mm wafers
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- 1 to 5 wafers per run. Sizes: 2”, 4" or 6"
- Pieces (up to 10x10mm)
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Allowed materials
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- Only for RCA cleaned wafers
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- Si,SiO2, Si3N4
- Quartz and Pyrex
- InAlP, GaAs
- SU8
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Choose a drying equipment
Process information
Standard process is 120 seconds for 100mm wafers or 180 seconds for 150mm wafers, at 2000 RPM - drying only.
If rinsing is used as well, the standard process is 60 seconds of rinse at 500 RPM, followed by 120/180 seconds of drying at 2000 RPM.