Specific Process Knowledge/Etch/III-V ICP/GaN: Difference between revisions
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===GaN etching=== | ===GaN etching=== | ||
Revision as of 10:42, 1 August 2016
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GaN etching
| Recipe | GaN Etch |
| Cl2 flow | 30 sccm |
| Ar flow | 10 sccm |
| Platen power | 200 W |
| Coil power | 600 W |
| Pressure | 2 mTorr |
| Platen chiller temperature | 20 oC |
| Results (GaN Etch) | |
| GaN etch rate | 550-580 nm/min |
| SiO2 etch rate | 110-120 nm/min |
| Sidewall angle | ~ 90 o |
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