Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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!Process Parameters | !Process Parameters | ||
!Comments | !Comments | ||
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|No Pretreatment | |No Pretreatment | ||
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Acceleration 4000 s-2, | Acceleration 4000 s-2, | ||
softbake 2 - 5 min at 150 deg Celcius | softbake 2 - 5 min at 150 deg Celcius | ||
| | |disposal pipette used; clean by N2-gun before use | ||
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|9 points measured on 100 mm wafer | |9 points measured on 100 mm wafer | ||
|ZEP program used; measured at 70 deg only | |ZEP program used; measured at 70 deg only | ||
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dose 120-280 muC/cm2 | dose 120-280 muC/cm2 | ||
|Virtual chip mark height detection | |Virtual chip mark height detection | ||
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N2 Blow dry | N2 Blow dry | ||
|Agitation (by hand) while developing | |Agitation (by hand) while developing | ||
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Revision as of 10:02, 2 July 2014
These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.
Process Flow
Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).
| Equipment | Process Parameters | Comments | |
|---|---|---|---|
| Pretreatment | |||
| 4" Si wafers | No Pretreatment | ||
| Spin Coat | |||
| Spin Coater Manual, LabSpin, A-5 | AR-P 6200/2 AllResist E-beam resist
60 sec at various spin speed. Acceleration 4000 s-2, softbake 2 - 5 min at 150 deg Celcius |
disposal pipette used; clean by N2-gun before use | |
| Characterization | |||
| Ellipsometer VASE B-1 | 9 points measured on 100 mm wafer | ZEP program used; measured at 70 deg only | |
| E-beam Exposure | |||
| JEOL 9500 E-beam writer, E-1 | Dosepattern 14nm - 100nm,
dose 120-280 muC/cm2 |
Virtual chip mark height detection | |
| Development | |||
| Fumehood, D-3 | 60 sec in X AR 600-54/6,
60 sec rinse in IPA, N2 Blow dry |
Agitation (by hand) while developing | |
| Characterization | |||
| Zeiss SEM Supra 60VP, D-3 | |||
Spin Curves
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
| AllResist AR-P 6200/2 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC. | ||||||
|---|---|---|---|---|---|---|
| Spin Speed [rpm] | Acceleration [1/s2] | Thickness [nm] | St Dev | |||
| 2000 | 4000 | 225.98 | 0.97 | |||
| 3000 | 4000 | 194.00 | 0.6 | |||
| 4000 | 4000 | 169.57 | 0.32 | |||
| 5000 | 4000 | 151.47 | 0.26 | |||
| 6000 | 4000 | 142.38 | 0.41 | |||
| 7000 | 4000 | 126.59 | 0.36 | |||
| AllResist CSAR on Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC. | ||||||
|---|---|---|---|---|---|---|
| Spin Speed [rpm] | Acceleration [1/s2] | Thickness [nm] | St Dev | |||
| 3000 | 4000 | 201.61 | 1.20 | |||
| 4000 | 4000 | 173.89 | 0.64 | |||
| 5000 | 4000 | 155.91 | 0.65 | |||
| AllResist CSAR 1:1 in anisole, Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC. | ||||||
|---|---|---|---|---|---|---|
| Spin Speed [rpm] | Acceleration [1/s2] | Thickness [nm] | St Dev | |||
| 2000 | 4000 | 83.48 | 0.49 | |||
| 3000 | 4000 | 67.12 | 0.41 | |||
| 4000 | 4000 | 58.64 | 0.44 | |||
| 5000 | 4000 | 53.13 | 0.39 | |||
| 6000 | 4000 | 48.76 | 0.38 | |||