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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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DCH-Employees-701
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DCH-Employees-701
2,257 edits
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!Process Parameters
!Process Parameters
!Comments
!Comments
!Initials and date
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|No Pretreatment
|No Pretreatment
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|TIGRE, 08-04-2014
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Acceleration 4000 s-2,  
Acceleration 4000 s-2,  
softbake 2 - 5 min at 150 deg Celcius
softbake 2 - 5 min at 150 deg Celcius
|Resist poured directly from bottle
|disposal pipette used; clean by N2-gun before use
|TIGRE, 09-04-2014, 16-06-2014
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|9 points measured on 100 mm wafer
|9 points measured on 100 mm wafer
|ZEP program used; measured at 70 deg only
|ZEP program used; measured at 70 deg only
|TIGRE, 09-04-2014, 16-06-2014
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dose 120-280 muC/cm2
dose 120-280 muC/cm2
|Virtual chip mark height detection
|Virtual chip mark height detection
| TIGRE, 10-04-2014
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N2 Blow dry
N2 Blow dry
|Agitation (by hand) while developing
|Agitation (by hand) while developing
| TIGRE, 10-04-2014
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| TIGRE, ??-04-2014
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