Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
| Line 164: | Line 164: | ||
|Approved, not tested yet. Should work similar to ZEP520A. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | |Approved, not tested yet. Should work similar to ZEP520A. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | ||
|[[media:CSAR_62_and_process_chemicals.pdf|CSAR_62_and_process_chemicals.pdf]], [[media:CSAR_62_Abstract_Allresist.pdf|CSAR_62_Abstract_Allresist.pdf]] | |[[media:CSAR_62_and_process_chemicals.pdf|CSAR_62_and_process_chemicals.pdf]], [[media:CSAR_62_Abstract_Allresist.pdf|CSAR_62_Abstract_Allresist.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters# | |[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]] | ||
|X AR 600-54/6, MIBK:IPA | |X AR 600-54/6, MIBK:IPA | ||
|IPA, H2O | |IPA, H2O | ||
| Line 177: | Line 177: | ||
|Not approved and not yet purchased. Low dose to clear, can be used for trilayer (PEC-free) resist-stack. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | |Not approved and not yet purchased. Low dose to clear, can be used for trilayer (PEC-free) resist-stack. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | ||
|[[media:ZEP7000.pdf|ZEP7000.pdf]] | |[[media:ZEP7000.pdf|ZEP7000.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters# | |[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]] | ||
|ZED-500/Hexyl Acetate,n-amyl acetate, oxylene. | |ZED-500/Hexyl Acetate,n-amyl acetate, oxylene. | ||
|IPA | |IPA | ||
| Line 190: | Line 190: | ||
|We have various types of PMMA in the cleanroom, none are provided by DTU Danchip. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | |We have various types of PMMA in the cleanroom, none are provided by DTU Danchip. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | ||
| | | | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters# | |[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]] | ||
| MIBK:IPA (1:3), IPA:H2O | | MIBK:IPA (1:3), IPA:H2O | ||
|IPA | |IPA | ||
| Line 203: | Line 203: | ||
|Approved, not tested yet. Used for trilayer (PEC-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | |Approved, not tested yet. Used for trilayer (PEC-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | ||
|[[media:AR_P617.pdf|AR_P617.pdf]] | |[[media:AR_P617.pdf|AR_P617.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters# | |[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]] | ||
|AR600-55, MIBK:IPA | |AR600-55, MIBK:IPA | ||
| | | | ||
| Line 219: | Line 219: | ||
|Approved. Standard negative resist, mainly for III-V materials | |Approved. Standard negative resist, mainly for III-V materials | ||
| | | | ||
|[[Specific_Process_Knowledge/Lithography/Coaters# | |[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]] | ||
|TMAH, AZ400K:H2O | |TMAH, AZ400K:H2O | ||
|H2O | |H2O | ||
| Line 233: | Line 233: | ||
|Approved. Standard negative resist. | |Approved. Standard negative resist. | ||
| | | | ||
|[[Specific_Process_Knowledge/Lithography/Coaters# | |[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]] | ||
|Ma-D333, TMAH, MIF726 | |Ma-D333, TMAH, MIF726 | ||
|H2O | |H2O | ||
| Line 246: | Line 246: | ||
|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@danchip.dtu.dk Peixiong Shi] for information. | |Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@danchip.dtu.dk Peixiong Shi] for information. | ||
|[[media:AR-N7500-7520.pdf|AR-N7500-7520.pdf]] | |[[media:AR-N7500-7520.pdf|AR-N7500-7520.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters# | |[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]] | ||
|AR 300-47, TMAH | |AR 300-47, TMAH | ||
| | | | ||