Specific Process Knowledge/Lithography: Difference between revisions
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*~20nm and up | *~20nm and up | ||
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*3D: 0.3 µm | *3D voxel through transparent substrate: 0.3 µm diameter; 0.6 µm high | ||
*2D spot on opaque substrate: 0.6 µm diameter | |||
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**PMMA | **PMMA | ||
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*UV | *UV sensitive: | ||
**IP photoresists | **IP photoresists, SU-8 (3D) | ||
** | **AZ resists (2D) | ||
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~ 100nm to 2µm | ~ 100nm to 2µm | ||
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droplet | droplet or coating | ||
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Revision as of 10:58, 12 June 2014

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
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| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Direct writing via electron beam | Pattern transfer via hot embossing(HE) | Direct writing via IR laser |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet or coating |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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