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New page: ==Annealing== At Danchip we have ? furnaces for oxidation: A1,A3,C1,C2,C3 and D1. Annealing can take place either by a dry process or a wet process. In a wet annealing you will also get so...
 
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==Annealing==
==Annealing==
At Danchip we have ? furnaces for oxidation: A1,A3,C1,C2,C3 and D1. Annealing can take place either by a dry process or a wet process. In a wet annealing you will also get some oxidation.
At Danchip we have six furnaces for annealing: A1,A3,C1,C2,C3 and C4. Annealing can take place either by a dry process or a wet process. In a wet annealing you will also get some oxidation.


*Dry anneal is used from 5nm - 200nm. Can be grown in furnaces:A1,A3,C1,C2,C3.
*Dry anneal is used for ? and can be done in furnaces:A1,A3,C1,C2,C3,C4.
*Wet anneal with H2O in a bubbler can be grown in furnaces:C1,C2,C3.
*Wet anneal with H2O in a bubbler is used for ? and can be done in furnaces:C1,C2,C3.


==Comparing the six oxidation furnaces==
==Comparing the six annealing furnaces==
{| {{table}} border="1" cellspacing="0" cellpadding="8"
{| {{table}} border="1" cellspacing="0" cellpadding="8"
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|''''''
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| align="center" style="background:#f0f0f0;"|'''C2 Anneal oxide'''
| align="center" style="background:#f0f0f0;"|'''C2 Anneal oxide'''
| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond'''
| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond'''
| align="center" style="background:#f0f0f0;"|'''D1 APOX'''
| align="center" style="background:#f0f0f0;"|'''C4 Anneal aluminium'''
|-
|-
! General description
! General description
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6" wafers.||Oxidation and annealing of wafers from the B-stack and PECVD1.||Oxidation and annealing of wafers from NIL.||Oxidation of very thick oxides
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6" wafers.||Annealing and oxidation of wafers from the B-stack and PECVD1.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium on.
|-
|-
! Dry oxidation
! Dry annealing
|x||x||x (with special permission)||x||x||
|x||x||x (with special permission)||x||x||x
|-
|-
!wet oxidation with torch (H2+O2)
!Wet annealing with bubler (water steam + N2)
|x||x||||||||
|||||x (with special permission)||x||x||
|-
!Wet oxidation with bubler (water steam + N2)
|||||x (with special permission)||x||x||x
|-
|-
!Process temperature
!Process temperature
|800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||1150 <sup>o</sup>C
|800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C
|-
!Cleanliness of dry oxide (rated 1-4, 1 is best)
|2||2||1||3||4||
|-
!Cleanliness of wet oxide (rated 1-4, 1 is best)
|1||1||2||3||4||3
|-
|-
! Batch size
! Batch size
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 200 4"
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers
|-
|-
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:  
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:  
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| align="center" style="background:#f0f0f0;"|'''C2 Anneal oxide'''
| align="center" style="background:#f0f0f0;"|'''C2 Anneal oxide'''
| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond'''
| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond'''
| align="center" style="background:#f0f0f0;"|'''D1 APOX'''
| align="center" style="background:#f0f0f0;"|'''C4 Anneal aluminium'''
|-
|-
| New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x
| New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x
|-
|-
| RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission)||x||x||
| RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission)||x||x||x
|-
|-
| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||||||||
| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||||||||
|-
|-
| Wafers directly from PECVD1||||||||x||x||
| Wafers directly from PECVD1||||||||x||x||x
|-
| Wafers directly from NIL bonding||||||||||x||x
|-
|-
| Wafers directly from NIL bonding||||||||||x||
|Wafers with aluminium on||||||||||||x
|-
|-
|}
|}
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