Specific Process Knowledge/Thin film deposition/Deposition of NiV: Difference between revisions

Revision as of 10:37, 29 June 2016

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Nickel Vanadium may be sputter deposited in either Sputter-system (Lesker) or PVD co-sputter/evaporation

In the chart below you can compare the different deposition equipment.

	Sputter deposition (PVD co-sputter/evaporation)This machine will be decommissioned soon	Sputter deposition (Sputter-System Lesker)
General description	Sputter deposition of NiV	Sputter deposition of NiV
Pre-clean	RF Ar clean	RF Ar clean
Layer thickness	About 10Å to 4000Å	About 10Å to 5000Å
Deposition rate	Depending on process parameters.	Depending on process parameters.
Batch size	12x2" wafers or 12x4" wafers or 4x6" wafers	Pieces or 1x4" wafer or 1x6" wafer
Allowed substrates	Silicon wafers Quartz wafers Pyrex wafers	Silicon wafers Quartz wafers
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Comment	Sputter target with NiV composition: Ni/V 93/7%	Sputter target with NiV composition: Ni/V 93/7%

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 Nickel Vanadium may be sputter deposited in either Sputter-system (Lesker) or PVD co-sputter/evaporation
-*[[/Sputter rates for NiV PVD co-sputter/evaporation|Sputtering of Nickel Vanadium in PVD co-sputter/evaporation]]
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 !
-! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
+! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])<span style="color:Red">This machine will be decommissioned soon</span>
 ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]])
 |-