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{| border="2" cellspacing="0" cellpadding="4" align="center"
{| border="2" cellspacing="0" cellpadding="4" align="center"
!
!
!Energy Dispersive X-ray Analysis
! Energy Dispersive X-ray Analysis
!Secondary Ion Mass Spectroscopy
! Secondary Ion Mass Spectroscopy
|-  
|-  
|Technique
| Technique
|Non destructive excitation of X-rays in the sample. The elemental analysis is possible because the energy of these photons is characteristic of the element they emitted from.
| Non destructive excitation of X-rays in the sample. The elemental analysis is possible because the energy of these photons is characteristic of the element they emitted from.
|Destructive method that sputters off surface atoms with heavy ions.   
| Destructive method that sputters off surface atoms with heavy ions.   
|-
|-
|Spatial resolution
| What elements are detected
|Very precise point-like analysis is possible with SEM electron beam.
| Any element heavier than boron/carbon
|Limited to what is visible in a camera
| Any element
|-
|-
|Depth resolution
| Chemical information
|The size interaction volume depends on the SEM high voltage and sample density:
| None: Only transistions involving inner shell electrons are detected
* The higher the SEM high voltage the bigger and deeper the interaction volume
| None
* The more dense the material is the smaller is the interaction volume
|-
|-
|Sensitivity
| Sample limitations
|Approximately 1 % atomic  
| Vacuum compatible
|1 ppb
| Vacuum compatible
|-
| Spatial resolution
| Very precise point-like analysis is possible with SEM electron beam.
| Limited to what is visible in a camera
|-
| Depth resolution
| The size interaction volume depends on the SEM high voltage and sample density:
  * The higher the SEM high voltage the bigger and deeper the interaction volume
  * The more dense the material is the smaller is the interaction volume
| Depth profiling is
|-
| Detection limit
| Approximately 1 % atomic  
| Down to 1 ppb for many elements
|}
|}




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The SIMS technique provides a unique combination of extremely high sensitivity for all elements from Hydrogen to Uranium (detection limit down to ppb level for many elements), high lateral resolution imaging (down to 40 nm), and a very low background that allows high dynamic range (more than 5 decades). This technique is "destructive" by its nature (sputtering of material). It can be applied to any type of material (insulators, semiconductors, metals) that can stay under vacuum.
(detection limit down to ppb level for many elements), high lateral resolution imaging (down to 40 nm), and a very low background that allows high dynamic range (more than 5 decades). This technique is "destructive" by its nature (sputtering of material). It can be applied to any type of material (insulators, semiconductors, metals) that can stay under vacuum.


It allows molecular as well as elemental characterization of the first top monolayer in the static SIMS mode. It allows also the investigation of bulk composition or depth distribution of trace elements in the dynamic SIMS mode, with a depth resolution ranging from one to 20-30 nanometers.  
It allows molecular as well as elemental characterization of the first top monolayer in the static SIMS mode. It allows also the investigation of bulk composition or depth distribution of trace elements in the dynamic SIMS mode, with a depth resolution ranging from one to 20-30 nanometers.  


This is why SIMS is one of the most widespread surface analysis techniques for advanced material research.
This is why SIMS is one of the most widespread surface analysis techniques for advanced material research.
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