Jump to content

Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions

← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
No edit summary
Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
Line 55: Line 55:
|}
|}


==Concentrated H3PO4==
==Concentrated H2SO4==


Concentrated H<sub>2</sub>SO<sub>4</sub>(90%) is a selective etch of InP with a very low etch rate in InGaAsP.
Concentrated H<sub>2</sub>SO<sub>4</sub>(96%) is a selective etch of InP with a very low etch rate in InGaAsP.




Line 70: Line 70:
! width="20%" |InGaAs
! width="20%" |InGaAs
|-
|-
|H<sub>2</sub>SO<sub>4</sub>(90%)  
|H<sub>2</sub>SO<sub>4</sub>(96%)  
|13
|13
|?
|?
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/Wet_III-V_Etches"