Specific Process Knowledge/Lithography/Strip: Difference between revisions
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! | ! | ||
! Photoresist stripping | ! Photoresist stripping | ||
! Descum after lithography | |||
! Surface treatment of plastic, ceramic and metal | ! Surface treatment of plastic, ceramic and metal | ||
! Ashing of organic material | ! Ashing of organic material | ||
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|'''Process pressure''' | |'''Process pressure''' | ||
|0.8- 1.0mbar | |0.8- 1.0mbar | ||
| | |||
|0.5- 1.0mbar | |0.5- 1.0mbar | ||
|0.8-1.5mbar | |0.8-1.5mbar | ||
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|'''Process gases''' | |'''Process gases''' | ||
|O<sub>2</sub>, N<sub>2</sub> | |O<sub>2</sub>, N<sub>2</sub> | ||
|O<sub>2</sub> or O<sub>2</sub>/N<sub>2</sub> mixture | |||
|O<math>_2</math>, CF<math>_4</math>, N<math>_2</math> or their mixtures | |O<math>_2</math>, CF<math>_4</math>, N<math>_2</math> or their mixtures | ||
|O<sub>2</sub> | |O<sub>2</sub> | ||
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|'''Process power''' | |'''Process power''' | ||
|600-1000W | |600-1000W | ||
| | |||
|150-300W | |150-300W | ||
|1000W or less for heat- sensitive materials | |1000W or less for heat- sensitive materials | ||
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|'''Process time''' | |'''Process time''' | ||
|5-60min, depending of photoresist thickness | |5-60min, depending of photoresist thickness | ||
|a few minutes | |||
|a few seconds to a few minutes | |a few seconds to a few minutes | ||
|Between 0.5 and 20 hours, depending on the material | |Between 0.5 and 20 hours, depending on the material | ||
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|'''Batch size''' | |'''Batch size''' | ||
|1-10 wafers at a time | |1-10 wafers at a time | ||
|a few wafers at a time | |||
|1 wafer at a time | |1 wafer at a time | ||
|1 wafer at a time, use a container | |1 wafer at a time, use a container, e.g Petri dish | ||
|- | |- | ||
|'''Size of substrate''' | |'''Size of substrate''' | ||
|2"-6" | |||
|2"-6" | |2"-6" | ||
|2"-6" | |2"-6" | ||
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|'''Allowed materials''' | |'''Allowed materials''' | ||
|All | |All | ||
| | |||
|All | |All | ||
|All | |All | ||