Specific Process Knowledge/Characterization: Difference between revisions
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*[[/Optical characterization#Filmtek_4000|Filmtek 4000]] | *[[/Optical characterization#Filmtek_4000|Filmtek 4000]] | ||
*[[/Optical characterization#Prism_Coupler|Prism Coupler]] | *[[/Optical characterization#Prism_Coupler|Prism Coupler]] | ||
*[[/PL Mapper|PL mapper - ''Photoluminescence mapper'']] | |||
*[[Specific_Process_Knowledge/III-V_Process/characterisation/PL_Mapper|Photoluminescence Mapper]] | *[[Specific_Process_Knowledge/III-V_Process/characterisation/PL_Mapper|Photoluminescence Mapper]] | ||
Revision as of 07:54, 22 August 2014
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Choose characterization topic
- Sample imaging
- Topographic measurement
- Stress measurement
- Measurement of film thickness and optical constants
- Wafer thickness measurement
- Element analysis
- Contact angle measurement
- Four-Point_Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment
- SEM FEI - This instrument has been relocated to CEN
- SEM LEO
- SEM JEOL
- SEM Zeiss
- SEM Zeiss Supra 60 VP