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Specific Process Knowledge/Lithography/ZEP520A: Difference between revisions

Tigre (talk | contribs)
Created page with "These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe..."
 
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== Process Flow ==
== Process Flow ==
Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).
Test of ZEP resist; a positive e-beam resist from ZEON.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
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|No Pretreatment
|No Pretreatment
|
|
|TIGRE, 08-04-2014
|TIGRE, 23-04-2014
|-
|-


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|Spin Coater Manual, LabSpin, A-5
|AR-P 6200/2 AllResist E-beam resist
|ZEP520A 1:1 E-beam resist
60 sec at various spin speed.
60 sec at various spin speed.
Acceleration 4000 s-2,  
Acceleration 4000 s-2,  
softbake 5 min at 150 deg Celcius
softbake 2 min at 180 deg Celcius
|Resist poured directly from bottle
|Resist poured directly from bottle
|TIGRE, 09-04-2014
|TIGRE, 23-04-2014
|-
|-


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|9 points measured on 100 mm wafer
|9 points measured on 100 mm wafer
|ZEP program used; measured at 70 deg only
|ZEP program used; measured at 70 deg only
|TIGRE, 09-04-2014
|TIGRE, 23-04-2014
|-
|-


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dose 120-280 muC/cm2
dose 120-280 muC/cm2
|Virtual chip mark height detection
|Virtual chip mark height detection
| TIGRE, 10-04-2014
| TIGRE, 23-04-2014
|-
|-


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|Fumehood, D-3
|Fumehood, D-3
|60 sec in X AR 600-54/6,  
|60 sec in ,  
60 sec rinse in IPA,  
60 sec rinse in IPA,  
N2 Blow dry
N2 Blow dry
|Agitation (by hand) while developing
|Agitation (by hand) while developing
| TIGRE, 10-04-2014
| TIGRE, XX-04-2014
|-
|-


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|}
|}


== Spin Curve ==
== Spin Curve ==