Specific Process Knowledge/Thermal Process

Feedback to this page: click here

Choose a process type

• Oxidation - Grow a thermal oxide on silicon
• Annealing
• Dope with Boron
• Dope with Phosphorus

Choose an equipment to use

• Boron Drive-in + Predep furnace (A1) - For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards
• Gate Oxide furnace (A2) - For gate oxide growing on new wafers
• Gate Oxide furnace (A2) - For gate oxide growing on new wafers
• Phosphorus Drive-in furnace (A3) - For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep
• Phosphorus Predep furnace (A4) - For pre-deposition (doping) of phosphorus on Si wafers
• Anneal-oxide furnace(C1) - For oxidation and annealing of 100 mm and 150 mm wafers
• Anneal-bond furnace (C3) - For oxidation and annealing of bonded wafers
• Aluminium Anneal furnace (C4) - For oxidation and annealing of wafers containing aluminium
• Noble furnace - For annealing and oxidation of non-clean wafers
• APOX furnace - For growing of very thick oxide layers
• Jipelec RTP - For rapid thermal annealing of III-V materials and Si based materials
• BCB Curing oven - For resist curing and metal alloying
• Resist Pyrolysis furnace - For pyrolysis of different resist layers
• III-V Oven - For oxidation of Al_xGaAs layers.