Specific Process Knowledge/Thin film deposition/Deposition of Germanium

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Deposition of Germanium

Germanium can be deposited by thermal evaporation and e-beam evaporation.

	Thermal evaporation (Wordentec)	E-beam evaporation (Physimeca)
General description	Thermal deposition of Ge	E-beam deposition of Ge
Pre-clean	RF Ar clean	-
Layer thickness	10Å to about 2000Å	10Å to about 3000Å
Deposition rate	From 0.4 Å/s up to about ~2Å/s	From 5 Å/s up to 10/s
Batch size	24x 2" wafers or 6x 4" wafers or 6x 6" wafers	1x 2" wafer or 1x 4" wafers or Several smaller pieces
Allowed substrates	Silicon wafers Quartz wafers Pyrex wafers	III-V materials Silicon wafers Quartz wafers Pyrex wafers
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar
Comment	Recommended for unexposed e-beam resist	.