Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]]) | ! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]]) | ||
! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ! Sputter ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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| Sputter deposition of Si. '''Not''' recommended as first choice for Si deposition. | | Sputter deposition of Si. '''Not''' recommended as first choice for Si deposition. | ||
| E-beam evaporation of Si. | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Doping facility | ! Doping facility | ||
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|None | |None | ||
|None | |None | ||
|None | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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|None | |None | ||
|RF Ar clean | |RF Ar clean | ||
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|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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|No defined limits | |No defined limits | ||
|10Å to 2000Å | |10Å to 2000Å | ||
|10Å to 2500Å | |||
|- | |- | ||
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| About 6-8 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]] | | About 6-8 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]] | ||
|2Å/s to 8Å/s (see below). | |2Å/s to 8Å/s (see below). | ||
|1Å/s to 5Å/s (see below). | |||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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|Platen: 5-60 <sup>o</sup>C | |Platen: 5-60 <sup>o</sup>C | ||
|? | |? | ||
|20-250 <sup>o</sup>C | |||
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|. | |. | ||
|Not known | |Not known | ||
|Poor | |||
|Poor | |Poor | ||
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|Not tested | |Not tested | ||
|Bad for pyrex, for other materials we do not know | |Bad for pyrex, for other materials we do not know | ||
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*Up to 1x4" wafers | *Up to 1x4" wafers | ||
*smaller pieces | *smaller pieces | ||
| | |||
* 2" | |||
* chips | |||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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*Same materials as on the allowed materials below | *Same materials as on the allowed materials below | ||
| | |||
* Silicon wafers | |||
* Quartz wafers | |||
* Pyrex wafers | |||
| | | | ||
* Silicon wafers | * Silicon wafers | ||
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* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
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* III-V materials | |||
* Silicon wafers | |||
* Resists | |||
|- | |- | ||
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| The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD. | | The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD. | ||
| This process is not running really stable nowadays. | | This process is not running really stable nowadays. | ||
| | |||
|} | |} | ||