Specific Process Knowledge/Characterization/Element analysis: Difference between revisions

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 You can make detailed analysis on the elemental composition and distribution in a sample with 4 instruments at Danchip. The [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy/Leo|Leo SEM]] and [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy/FEI|FEI SEM]] are both equipped with an X-ray detector that allows you to make elemental analysis by using the technique Energy Dispersive X-ray analysis or EDX. The [[Specific Process Knowledge/Characterization/SIMS: Secondary Ion Mass Spectrometry|Atomika SIMS]] uses a technique called Secondary Ion Mass Spectrometry or SIMS. The [[Specific Process Knowledge/Characterization/XPS|XPS-ThermoScientific]] can be used for X-ray Photoelectron Spectroscopy measurements.
-== Energy Dispersive X-ray analysis ==
-The technique of extracting information from the X-rays generated in a sample that is irradiated with electrons is called energy dispersive X-ray analysis or EDX. (Other acronyms are Energy Dispersive x-ray Spectroscopy, EDS, or Electron Probe Microanalysis, EPMA). The energetic electrons in the incident beam create core level vacancies as they collide with sample atoms electrons in a multiple scattering process. This leaves the atoms in the sample in an excited state. In the process of decaying from this state photons may be emitted. The energy of these photons is determined by the difference in energy of the shells involved. Since atomic shells are unique for every element so will be the transitions between them. Thus, every element has its own characteristic X-ray spectrum that can be used to determine the elemental composition.
-Adding an EDX detector to a SEM provides a very powerful tool for elemental analysis. The capability of the SEM to precisely maneuver the electron beam in a number of ways enables us to make point-like analysis with nanometer precision.
-<gallery caption="The techniques EDX, SIMS and XPS" widths="240px" heights="240px" perrow="3">
-image:EDX-scheme.jpg|The high energy electrons in the beam (denoted above as incident particle) collide with the core electrons of the sample atoms that are left in an excited state with higher energy. One decay mechanism is to let an outer electron fall into the unoccupied state under emission of a photon that carries the excess energy. This energy is determined by the electronic shells and hence characteristic of the atom.
-image:SIMScascade.gif|A beam of high energy ions is rastered on the surface of the sample. Some of the atoms that used to make up the surface are sputtered off and emitted as secondary ions. The mass of the these ions is measured with a mass spectrometer.
-image:Schematic XPS.JPG|The atoms in the sample is irradiated with X-rays and the energy of the incoming photons are adsorbed. Photoelectrons are ejected, and the energy of these electrons can be measured. Since the energy of the incoming photon is known, the binding energy of the electrons in the atom can be determined. The binding energy is characteristic for the element, and therefore the composition of the sample can be determined.
-</gallery>
-== Secondary Ion Mass Spectrometry ==
-In the Atomika SIMS the samples are bombarded with a beam of either oxygen or caesium ions. When accelerated to high energy and rastered across the sample
-these ions will be able to gradually sputter off the surface atoms in a small area defined by the raster pattern. Some of the surface atoms are emitted as ionized particles. In this way one layer after another is peeled off the sample.
-These charged species are led through a mass spectrometer where a magnetic field is used to deflect them. The deflection increases with charge and decreases with mass and we are therefore able detect and count them according to their mass. This technique is called Secondary Ion Mass Spectrometry or SIMS.
-== X-ray Photoelectron Spectroscopy analysis ==
-During a XPS (X-ray Photoelectron Spectroscopy) analysis, the sample is irradiated with photons of a specific energy (in the Danchip system 1486 eV). When energy of the irradiating X-rays is adsorbed by the atoms in the sample, photoelectrons are ejected [[http://en.wikipedia.org/wiki/Photoelectric_effect]].
-Since the energy of the incoming photons is known, and the energy of the ejected electrons is measured, the binding energy of the electrons in the probed atoms can be determined. The binding energy of the electrons are element specific, and is therefore a "finger-print" of the atom. Hence, a measurement of the XPS spectrum gives information of which materials are present in the sample, and at which concentrations.
-XPS is an excellent technique to probe the chemical state of atoms on a surface. The binding energy of lower lying atomic levels (for example 1s, 2s and 2p) are at a specific energy, but is slightly affected by the chemical environment of the probed atom. This is known as the '''chemical shift'''. By measuring the shift of the electron binding energies one can determined the chemical state of atoms. See an example on the page [[Specific Process Knowledge/Characterization/XPS|XPS-ThermoScientific]].
 == Comparison of EDX, SIMS and XPS ==
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 | style="background:WhiteSmoke; color:black" | Quite fast and easy
 |}
+== Energy Dispersive X-ray analysis ==
+The technique of extracting information from the X-rays generated in a sample that is irradiated with electrons is called energy dispersive X-ray analysis or EDX. (Other acronyms are Energy Dispersive x-ray Spectroscopy, EDS, or Electron Probe Microanalysis, EPMA). The energetic electrons in the incident beam create core level vacancies as they collide with sample atoms electrons in a multiple scattering process. This leaves the atoms in the sample in an excited state. In the process of decaying from this state photons may be emitted. The energy of these photons is determined by the difference in energy of the shells involved. Since atomic shells are unique for every element so will be the transitions between them. Thus, every element has its own characteristic X-ray spectrum that can be used to determine the elemental composition.
+Adding an EDX detector to a SEM provides a very powerful tool for elemental analysis. The capability of the SEM to precisely maneuver the electron beam in a number of ways enables us to make point-like analysis with nanometer precision.
+<gallery caption="The techniques EDX, SIMS and XPS" widths="240px" heights="240px" perrow="3">
+image:EDX-scheme.jpg|The high energy electrons in the beam (denoted above as incident particle) collide with the core electrons of the sample atoms that are left in an excited state with higher energy. One decay mechanism is to let an outer electron fall into the unoccupied state under emission of a photon that carries the excess energy. This energy is determined by the electronic shells and hence characteristic of the atom.
+image:SIMScascade.gif|A beam of high energy ions is rastered on the surface of the sample. Some of the atoms that used to make up the surface are sputtered off and emitted as secondary ions. The mass of the these ions is measured with a mass spectrometer.
+image:Schematic XPS.JPG|The atoms in the sample is irradiated with X-rays and the energy of the incoming photons are adsorbed. Photoelectrons are ejected, and the energy of these electrons can be measured. Since the energy of the incoming photon is known, the binding energy of the electrons in the atom can be determined. The binding energy is characteristic for the element, and therefore the composition of the sample can be determined.
+</gallery>
+== Secondary Ion Mass Spectrometry ==
+In the Atomika SIMS the samples are bombarded with a beam of either oxygen or caesium ions. When accelerated to high energy and rastered across the sample
+these ions will be able to gradually sputter off the surface atoms in a small area defined by the raster pattern. Some of the surface atoms are emitted as ionized particles. In this way one layer after another is peeled off the sample.
+These charged species are led through a mass spectrometer where a magnetic field is used to deflect them. The deflection increases with charge and decreases with mass and we are therefore able detect and count them according to their mass. This technique is called Secondary Ion Mass Spectrometry or SIMS.
+== X-ray Photoelectron Spectroscopy analysis ==
+During a XPS (X-ray Photoelectron Spectroscopy) analysis, the sample is irradiated with photons of a specific energy (in the Danchip system 1486 eV). When energy of the irradiating X-rays is adsorbed by the atoms in the sample, photoelectrons are ejected [[http://en.wikipedia.org/wiki/Photoelectric_effect]].
+Since the energy of the incoming photons is known, and the energy of the ejected electrons is measured, the binding energy of the electrons in the probed atoms can be determined. The binding energy of the electrons are element specific, and is therefore a "finger-print" of the atom. Hence, a measurement of the XPS spectrum gives information of which materials are present in the sample, and at which concentrations.
+XPS is an excellent technique to probe the chemical state of atoms on a surface. The binding energy of lower lying atomic levels (for example 1s, 2s and 2p) are at a specific energy, but is slightly affected by the chemical environment of the probed atom. This is known as the '''chemical shift'''. By measuring the shift of the electron binding energies one can determined the chemical state of atoms. See an example on the page [[Specific Process Knowledge/Characterization/XPS|XPS-ThermoScientific]].
 == Typical application of SIMS ==