Specific Process Knowledge/Lithography/Baking: Difference between revisions
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[[Image:Hotplates.jpg|300x300px|thumb|Left: Hotplate 110 °C situated in C-1]] | [[Image:Hotplates.jpg|300x300px|thumb|Left: Hotplate 110 °C situated in C-1]] | ||
The 110 °C hotplate is used for 2 different things; hard bake of resist, and image reversal baking between two exposures. It is recommended to hard bake for 2 min. For image reversal it is recommended to bake at least 100 sec., some bake for 120 sec. | The 110 °C hotplate is used for 2 different things; hard bake of resist, and image reversal baking between two exposures. It is recommended to hard bake for 2 min. For image reversal it is recommended to bake at least 100 sec., some bake for 120 sec. | ||
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==Hotplate: 90-110C== | |||
[[Image:Hotplates.jpg|300x300px|thumb|Location of Hotplate: 90-110C in C-1]] | |||
Hotplate: 90-110C is used for baking of 2" - 6" wafers. | |||
'''The user manual, and contact information can be found in LabManager: [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=336 Hotplate: 90-110C]''' | |||
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