Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
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23-33 mJ/cm<sup>2</sup> per µm resist for i-line. | 23-33 mJ/cm<sup>2</sup> per µm resist for i-line. | ||
½ dose | ½ dose for broadband exposure. | ||
'''Reverse process:''' | '''Reverse process:''' | ||
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10.5 mJ/cm<sup>2</sup> per µm resist for i-line, followed by 210 mJ/cm<sup>2</sup> flood exposure after reversal bake. | 10.5 mJ/cm<sup>2</sup> per µm resist for i-line, followed by 210 mJ/cm<sup>2</sup> flood exposure after reversal bake. | ||
½ dose | ½ dose for broadband exposure. | ||
|AZ 351B developer | |AZ 351B developer | ||
|DI water | |DI water | ||
| Line 68: | Line 68: | ||
Multiple exposure recommended. | Multiple exposure recommended. | ||
½ dose | ½ dose for broadband exposure. | ||
|AZ 351B developer | |AZ 351B developer | ||
|DI water | |DI water | ||
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105 mJ/cm<sup>2</sup> per µm resist for i-line. | 105 mJ/cm<sup>2</sup> per µm resist for i-line. | ||
1/5 dose | 1/5 dose for broadband exposure. | ||
|AZ 726 MIF developer | |AZ 726 MIF developer | ||
|DI water | |DI water | ||
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|<30 mJ/cm<sup>2</sup> per µm resist for i-line, decreasing with increasing thickness. | |<30 mJ/cm<sup>2</sup> per µm resist for i-line, decreasing with increasing thickness. | ||
Same dose | Same dose for broadband exposure. | ||
|AZ 726 MIF developer | |AZ 726 MIF developer | ||
|DI water | |DI water | ||