Specific Process Knowledge/Bonding: Difference between revisions
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![[/Eutectic bonding|Eutectic bonding]] | |||
![[/Fusion bonding|Fusion bonding]] | |||
![[/Anodic bonding|Anodic bonding]] | |||
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For bonding two substrates by use of an interphase that makes an eutecticum. | !General description | ||
| | |For bonding two substrates by use of an interphase that makes an eutecticum. | ||
For bonding two identical materials. | |For bonding two identical materials. | ||
| | |For bonding Si and Glass. | ||
For bonding Si and Glass. | |||
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Depending on the eutecticum 310°C to 400°C. | !Bonding temperature | ||
| | |Depending on the eutecticum 310°C to 400°C. | ||
Depending on defects 50°C to 400°C. | |Depending on defects 50°C to 400°C. | ||
| | |Depending on the voltage 300°C to 500°C Standard is 400°C. | ||
Depending on the voltage 300°C to 500°C Standard is 400°C. | |||
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| | !Annealing temperature | ||
No annealing | |No annealing | ||
| | |1000°C in the bond furnace C3. | ||
1000°C in the bond furnace C3. | |No annealing | ||
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No annealing | |||
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| | !Materials possible to bond | ||
Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni | |Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni | ||
| | |Si/Si, SiO2/SiO2 | ||
Si/Si, SiO2/SiO2 | |Si/Pyrex (glass) | ||
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Si/Pyrex (glass) | |||
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| | !Substrate size | ||
Up to 6" (aligning only possible for 4" and 6") | |Up to 6" (aligning only possible for 4" and 6") | ||
| | |Up to 6" (aligning only possible for 4" and 6") | ||
Up to 6" (aligning only possible for 4" and 6") | |Up to 6" (aligning only possible for 4" and 6") | ||
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Up to 6" (aligning only possible for 4" and 6") | |||
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| | !Cleaning | ||
Cleaning by N2. | |Cleaning by N2. | ||
| | |Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]]. | ||
Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]]. | |Cleaning by N2. | ||
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Cleaning by N2. | |||
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| | !IR alignment | ||
Double side polished wafers. | |Double side polished wafers. | ||
| | |Double side polished wafers. | ||
Double side polished wafers. | |Not relevant. | ||
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Not relevant. | |||
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<br clear="all" /> | <br clear="all" /> | ||
Revision as of 08:42, 28 March 2014
Choose equipment
Choose bonding methods in EVG NIL
Comparing the three bonding methods in the EVG NIL
| Eutectic bonding | Fusion bonding | Anodic bonding | |
|---|---|---|---|
| General description | For bonding two substrates by use of an interphase that makes an eutecticum. | For bonding two identical materials. | For bonding Si and Glass. |
| Bonding temperature | Depending on the eutecticum 310°C to 400°C. | Depending on defects 50°C to 400°C. | Depending on the voltage 300°C to 500°C Standard is 400°C. |
| Annealing temperature | No annealing | 1000°C in the bond furnace C3. | No annealing |
| Materials possible to bond | Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni | Si/Si, SiO2/SiO2 | Si/Pyrex (glass) |
| Substrate size | Up to 6" (aligning only possible for 4" and 6") | Up to 6" (aligning only possible for 4" and 6") | Up to 6" (aligning only possible for 4" and 6") |
| Cleaning | Cleaning by N2. | Wet chemical cleaning, IMEC. | Cleaning by N2. |
| IR alignment | Double side polished wafers. | Double side polished wafers. | Not relevant. |