Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions

Revision as of 11:53, 12 September 2014

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Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Alcatel)	E-beam evaporation (Physimeca)
General description	E-beam deposition of Pd	E-beam deposition of Pd
Pre-clean		RF Ar clean
Layer thickness	10Å to 3000Å*	10Å to 2000Å
Deposition rate	2Å/s to 10Å/s	2Å/s to 10Å/s
Batch size	Up to 1x4" wafers smaller pieces	1x 2" wafer or 1x 4" wafers or Several smaller pieces
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar
Comment

* For thicknesses above 200 nm permission is requested.

@@ Line 12: / Line 12: @@
 !
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
+! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
 |-
 |-style="background:WhiteSmoke; color:black"
 ! General description
+| E-beam deposition of Pd
 | E-beam deposition of Pd
 |-
 |-style="background:Lightgrey; color:black"
 ! Pre-clean
+|
 |RF Ar clean
 |-
 |-style="background:WhiteSmoke; color:black"
 ! Layer thickness
-|10Å to 1µm*
+|10Å to 3000Å*
+|10Å to 2000Å
 |-
 |-style="background:Lightgrey; color:black"
 ! Deposition rate
+|2Å/s to 10Å/s
 |2Å/s to 10Å/s
 |-
@@ Line 35: / Line 40: @@
 *Up to 1x4" wafers
 *smaller pieces
+|
+*1x 2" wafer or
+*1x 4" wafers or
+*Several smaller pieces
 |-
 |-style="background:Lightgrey; color:black"
@@ Line 46: / Line 55: @@
 * SU-8
 * Metals
+|
+* Silicon oxide
+* Silicon (oxy)nitride
+* Photoresist
+* PMMA
+* Mylar
 |-style="background:WhiteSmoke; color:black"
 ! Comment
+|
 |