Specific Process Knowledge/Back-end processing/Wire Bonder: Difference between revisions

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 [[Image:TPTWireBonder.jpg|300x300px|thumb|TPT Wire Bonder Building 346, 2nd floor]]
-Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder.
+The TPT Wire Bonder is a new machine bought i 2007. Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder.
-#Wedge Bonding
+Please be aware that the bonder only is operated by Danchip personal.
-:Gold wire 25 my wire.
-:Alluminium wire 25 my wire.
-:Min. bonding area 200 my.
-#Ball bonding
-:Ball bonding gives free choice of  bonding direction. First bond forms a small ball and second bond is a wedge bond.
-:Gold only 25 my wire.
+===Wedge Bonding===
-:Min. bonding pad 300 my.
+*Gold wire 25 µm wire.
-:Sample withstand heating to 120 degree C.
+*Aluminium wire 25 µm wire.
+*Min. bonding area 200 µm.
+===Ball Bonding===
+Ball bonding gives free choice of  bonding direction. First bond forms a small ball and second bond is a wedge bond.
+*Gold only 25 µm wire.
+*Min. bonding pad 300 µm.
+*Sample withstand heating to 120 <sup>o</sup>C.