Specific Process Knowledge/Back-end processing/Wire Bonder: Difference between revisions
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[[Image:TPTWireBonder.jpg|300x300px|thumb|TPT Wire Bonder Building 346, 2nd floor]] | [[Image:TPTWireBonder.jpg|300x300px|thumb|TPT Wire Bonder Building 346, 2nd floor]] | ||
Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder. | The TPT Wire Bonder is a new machine bought i 2007. Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder. | ||
Please be aware that the bonder only is operated by Danchip personal. | |||
===Wedge Bonding=== | |||
*Gold wire 25 µm wire. | |||
*Aluminium wire 25 µm wire. | |||
*Min. bonding area 200 µm. | |||
===Ball Bonding=== | |||
Ball bonding gives free choice of bonding direction. First bond forms a small ball and second bond is a wedge bond. | |||
*Gold only 25 µm wire. | |||
*Min. bonding pad 300 µm. | |||
*Sample withstand heating to 120 <sup>o</sup>C. | |||
Revision as of 09:20, 21 January 2008
TPT Wire Bonder
The TPT Wire Bonder is a new machine bought i 2007. Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder.
Please be aware that the bonder only is operated by Danchip personal.
Wedge Bonding
- Gold wire 25 µm wire.
- Aluminium wire 25 µm wire.
- Min. bonding area 200 µm.
Ball Bonding
Ball bonding gives free choice of bonding direction. First bond forms a small ball and second bond is a wedge bond.
- Gold only 25 µm wire.
- Min. bonding pad 300 µm.
- Sample withstand heating to 120 oC.