Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
| Line 86: | Line 86: | ||
|[[media:AZ_nLOF_2020.pdf|AZ_nLOF_2020.pdf]] | |[[media:AZ_nLOF_2020.pdf|AZ_nLOF_2020.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]] | |[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]] | ||
|... | |<30 mJ/cm2 per µm resist for i-line. | ||
Decreasing with increasing thickness. | |||
Same dose for broadband exposure. | |||
|AZ 726 MIF developer | |AZ 726 MIF developer | ||
|DI water | |DI water | ||