Specific Process Knowledge/Back-end processing/Wire Bonder: Difference between revisions
New page: ==TPT Wire Bonder== Image:Example.jpg Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The T... |
|||
| Line 1: | Line 1: | ||
==TPT Wire Bonder== | ==TPT Wire Bonder== | ||
[[Image: | [[Image:TPTWireBonder.jpg|300x300px|thumb|TPT Wire Bonder Building 346, 2nd floor]] | ||
Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder. | Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder. | ||
#Wedge Bonding | |||
:Gold wire 25 my wire. | |||
:Alluminium wire 25 my wire. | |||
:Min. bonding area 200 my. | |||
#Ball bonding | |||
:Ball bonding gives free choice of bonding direction. First bond forms a small ball and second bond is a wedge bond. | |||
:Gold only 25 my wire. | |||
:Min. bonding pad 300 my. | |||
:Sample withstand heating to 120 degree C. | |||
Revision as of 09:13, 21 January 2008
TPT Wire Bonder
Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder.
- Wedge Bonding
- Gold wire 25 my wire.
- Alluminium wire 25 my wire.
- Min. bonding area 200 my.
- Ball bonding
- Ball bonding gives free choice of bonding direction. First bond forms a small ball and second bond is a wedge bond.
- Gold only 25 my wire.
- Min. bonding pad 300 my.
- Sample withstand heating to 120 degree C.