Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
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*TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created. | *TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created. | ||
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*Reactive sputtering of Ti target in Ar/O2 (10% O2) plasma. | |||
* RF sputtering of TiO2 target | |||
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*Can probably be varied (sputter target: Ti, O2 added during deposition) | *Can probably be varied (sputter target: Ti, O2 added during deposition) | ||
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* | *unknown | ||
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*3.0-3.5nm/min | *3.0-3.5nm/min | ||
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* | *3 - 5 nm/min | ||
*0.3 - 0.5nm/min | |||
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*Not Known | *Not Known | ||
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* | *Not Known | ||
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*Expected to be below 100<sup>o</sup>C | *Expected to be below 100<sup>o</sup>C | ||
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* | *Done at RT. There is a possibility to run at higher temperatures | ||
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*Smaller pieces can be mounted with capton tape | *Smaller pieces can be mounted with capton tape | ||
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* | *several small samples | ||
* | *several 50 mm wafers (Ø150mm carrier) | ||
* | *1x 100 mm wafers | ||
* | *1x 150 mm wafers | ||
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*not Pb and very poisonous materials | *not Pb and very poisonous materials | ||
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* | *Almost any materials | ||
* | *Pb and poisonous materials only after special agreement | ||
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