Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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[[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]] | [[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]] | ||
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[[Specific_Process_Knowledge/Thermal_Process/Furnace: Multipurpose Anneal| Multipurpose Anneal Furnace]] | |||
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|Annealing of almost all materials on silicon wafers. | |Annealing of almost all materials on silicon wafers. | ||
|Rapid thermal annealing | |Rapid thermal annealing | ||
|Annealing, oxidation and resist pyrolysis of different samples | |||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
*Vacuum is possible | |||
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*N<sub>2</sub> | |||
*H<sub>2</sub> | |||
*Vacuum is possible | *Vacuum is possible | ||
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*20 <sup>o</sup>C - 1000 <sup>o</sup>C | *20 <sup>o</sup>C - 1000 <sup>o</sup>C | ||
*Ramp up to 300 C/min | *Ramp up to 300 C/min | ||
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*Vacuum: *20 <sup>o</sup>C - 1050 <sup>o</sup>C¨ | |||
*No vacuum: *20 <sup>o</sup>C - 1100 <sup>o</sup>C | |||
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*Small samples on a carrier wafer, horizontal | *Small samples on a carrier wafer, horizontal | ||
*One 100 mm wafers on a carrier wafer | *One 100 mm wafers on a carrier wafer | ||
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*1-30 50 mm, 100 mm or 150 mm wafers per run | |||
*1-50 200 mm wafers per run | |||
*Smaller samples (placed in a Si carrier wafer) | |||
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*Silicon wafers | *Silicon wafers | ||
*Some metals | *Some metals | ||
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