Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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!Generel description | !Generel description | ||
|Drive-in of boron deposited in the | |Drive-in of boron deposited in the same furnace or drive-in of ion implanted boron. Can also be used for dry and wet oxidation. | ||
|Oxidation of gate-oxide and other | |Oxidation of gate-oxide and other very clean oxides. | ||
|Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation. | |Drive-in of phosphorous deposited in the phosphorous pre-dep furnace (A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation. | ||
|Oxidation of 6" wafers. Oxidation of new wafer with out RCA cleaning. Oxidation of wafers from the LPCVD furnaces and | |Oxidation of 4" and 6" wafers. Oxidation of new wafer with out RCA cleaning. Oxidation of wafers from the LPCVD furnaces and PECVD2. | ||
|Oxidation of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | |Oxidation of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | ||
|Oxidation of very thick oxides, thickness higher than 4 µm. | |Oxidation of very thick oxides, thickness higher than 4 µm. | ||
|Oxidation of almost materials on silicon | |Oxidation of almost all materials on silicon wafers. | ||
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!Process | !Process temperature | ||
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*900 <sup>o</sup>C - 1150 <sup>o</sup>C | *900 <sup>o</sup>C - 1150 <sup>o</sup>C | ||
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Including one test wafer | Including one test wafer | ||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||