Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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 At Danchip we have seven furnaces for oxidation: A1, A2, A3, C1, C3, D1 and Nobel. Oxidation can take place either by a dry process or a wet process. The film quality of dry oxide is better than for wet oxide with regards to density and dielectric constant, however the oxidation rate is slow for dry oxide.
 If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen.
-*Dry oxidation is used from 5 nm - 200 nm. Can be grown in furnaces: A1, A2, A3, C1, C3.
+*Dry oxidation is used from 5 nm - 200 nm and can be grown in the furnaces: A1, A2, A3, C1, C3.
-*Wet oxidation is used up to 4 µm can be grown in furnace: A1, A3, Nobel.
+*Wet oxidation is used up to 4 µm and can be grown in the furnaces: A1, A3, Nobel.
 *Very thick oxide >4 µm can be grown in D1, it is still a wet oxidation.
-The standard recipes, quality control limits and results for the Boron Drive-in and Phosphorus Drive-in furnaces can be found here:
+The standard recipes, quality control limits and results for the Boron Drive-in and Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:
 *[[Specific Process Knowledge/Thermal Process/A1 Furnace Boron drive-in|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]]