Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
Line 2: | Line 2: | ||
==Annealing== | ==Annealing== | ||
At Danchip we have three furnaces and an RTP | At Danchip we have three furnaces and an RTP (Rapid thermal annealing) that can be used annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate. | ||
The | The reipes for oxidation are made so that a 20 minutes N<sub>2</sub> annealing step is included after the oxiation step and it is not normally necessary to make one more annealing of the wafers. | ||
==Comparison of the annealing furnaces== | ==Comparison of the annealing furnaces== |
Revision as of 16:01, 19 March 2014
Feedback to this page: click here
Annealing
At Danchip we have three furnaces and an RTP (Rapid thermal annealing) that can be used annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.
The reipes for oxidation are made so that a 20 minutes N2 annealing step is included after the oxiation step and it is not normally necessary to make one more annealing of the wafers.
Comparison of the annealing furnaces
General description | Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1. | Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | Annealing of almost materials on silicon wafer. | Rapid thermal annealing |
---|---|---|---|---|
Annealing gas |
|
|
|
|
Process temperature |
|
|
|
|
Substrate and Batch size |
|
|
|
|
Allowed materials |
|
|
|
|