Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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==Annealing== | ==Annealing== | ||
At Danchip we have three furnaces and an RTP for annealing: C1, C3, Noble furnace and RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate. | At Danchip we have three furnaces and an RTP for annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate. | ||
The furnace for oxidation are made so a 20 minutes N<sub>2</sub> annealing step is include and it is not necessary to make one more. | The furnace for oxidation are made so a 20 minutes N<sub>2</sub> annealing step is include and it is not necessary to make one more. | ||