Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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==Annealing== | ==Annealing== | ||
At Danchip we have three furnaces and an RTP for annealing: C1, C3, Noble furnace and RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate. | At Danchip we have three furnaces and an RTP for annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate. | ||
The furnace for oxidation are made so a 20 minutes N<sub>2</sub> annealing step is include and it is not necessary to make one more. | The furnace for oxidation are made so a 20 minutes N<sub>2</sub> annealing step is include and it is not necessary to make one more. |
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Annealing
At Danchip we have three furnaces and an RTP for annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.
The furnace for oxidation are made so a 20 minutes N2 annealing step is include and it is not necessary to make one more.
Comparison of the annealing furnaces
General description | Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1. | Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | Annealing of almost materials on silicon wafer. | Rapid thermal annealing |
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Annealing gas |
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Process temperature |
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Substrate and Batch size |
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Allowed materials |
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