Specific Process Knowledge/Thermal Process/Annealing

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Annealing

At Danchip we have three furnaces and an RTP for annealing: C1, C3, Noble furnace and RTP. Annealing normally takes place in an N₂ atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.

The furnace for oxidation are made so a 20 minutes N₂ annealing step is include and it is not necessary to make one more.

Comparison of the annealing furnaces

	C1: Anneal Oxide	C3: Anneal Bond	Noble furnace	Jipelec RTP
General description	Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1.	Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.	Annealing of almost materials on silicon wafer.	Rapid thermal annealing
Annealing gas	N2	N2 Ar Wet annealing with bobbler (water steam + N2)	N2 Ar	N2 Vacuum is possible
Process temperature	700 oC - 1100 oC	700 oC - 1150 oC	20 oC - 1000 oC	20 oC - 1000 oC Ramp up to 300 C/min
Substrate and Batch size	1-30 50 mm wafers 1-30 100 mm wafers 1-30 150 mm wafers	Small samples on carrier wafer, horizontal 1-30 50 mm wafers 1-30 100 mm wafers	Small samples on carrier wafer, horizontal 1-25 50 mm wafers 1-25 100 mm wafers, vertical and horizontal	Small samples on carrier wafer One 100 mm wafers on carrier wafer
Allowed materials	All processed wafers have to be RCA cleaned. Except for wafers from LPCVD furnaces and PECVD1.	All processed wafers have to be RCA cleaned. Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.	Almost all materials, permission is need.	III-V samples Silicon wafer Some metals