Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]] | [[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]] | ||
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[[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]] | |||
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|Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | |Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | ||
|Annealing of almost materials on silicon wafer. | |Annealing of almost materials on silicon wafer. | ||
|Rapid thermal annealing | |||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
*Ar | *Ar | ||
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*N<sub>2</sub> | |||
*Vacuum is possible | |||
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*20 <sup>o</sup>C - 1000 <sup>o</sup>C | *20 <sup>o</sup>C - 1000 <sup>o</sup>C | ||
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*20 <sup>o</sup>C - 1000 <sup>o</sup>C | |||
*Ramp up to 300 C/min | |||
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*1-25 50 mm wafers | *1-25 50 mm wafers | ||
*1-25 100 mm wafers, vertical and horizontal | *1-25 100 mm wafers, vertical and horizontal | ||
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*Small samples on carrier wafer | |||
*One 100 mm wafers on carrier wafer | |||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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All processed wafers have to be RCA cleaned. | *All processed wafers have to be RCA cleaned. | ||
*Except for wafers from LPCVD furnaces and PECVD1. | |||
Except for wafers from LPCVD furnaces and PECVD1. | | | ||
*All processed wafers have to be RCA cleaned. | |||
*Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum. | |||
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*Almost all materials, permission is need. | |||
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*III-V samples | |||
*Silicon wafer | |||
*Some metals | |||
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