Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions
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==Deposition of Titanium Oxide== | ==Deposition of Titanium Oxide== | ||
Titanium oxide can be deposited only by sputter technique. At the moment the only system where we have a target for Titanium oxide is [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample. | Titanium oxide can be deposited only by sputter technique. At the moment the only system where we have a target for Titanium oxide is [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample. | ||
*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]] | |||
==Comparison of the methods for deposition of Titanium Oxide== | ==Comparison of the methods for deposition of Titanium Oxide== |
Revision as of 13:47, 21 March 2014
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Deposition of Titanium Oxide
Titanium oxide can be deposited only by sputter technique. At the moment the only system where we have a target for Titanium oxide is IBE/IBSD Ionfab300. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.
Comparison of the methods for deposition of Titanium Oxide
Sputter technique using IBE/IBSD Ionfab300 | Sputter System Lesker | |
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Generel description |
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Generel description - method 2 |
Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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More info on TiO2 |
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Substrate size |
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Allowed materials |
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