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| ==Comparison of the methods for deposition of Titanium Oxide== | | ==Comparison of the methods for deposition of Titanium Oxide== |
| {| border="1" cellspacing="0" cellpadding="4" align="center"
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| !
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| !Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
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| ! Sputter technique Lesker
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| |- valign="top" align="left"
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| | Stoichiometry
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| *Can probably be varied (sputter target: Ti, O2 added during deposition)
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| *
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| |-valign="top" align="left"
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| |Film thickness
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| *~10nm - ~0.5µm(>2h)
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| *Thin layers
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| |- valign="top" align="left"
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| |Deposition rate
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| *3.0-3.5nm/min ± ?
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| *
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| |- valign="top" align="left"
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| |Process Temperature
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| *Expected to be below 100<sup>o</sup>C
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| *
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| |- valign="top" align="left"
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| |Step coverage
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| *Not Known
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| *
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| |- valign="top" align="left"
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| |Film quality
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| *
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| *
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| |- valign="top" align="left"
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| |Batch size
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| *1 50mm wafer
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| *1 100mm wafer
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| *1 150mm wafer
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| *1 200mm wafer
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| *Smaller pieces can be mounted with capton tape
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| *
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| |- valign="top" align="left"
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| |Material allowed
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| *Almost any materials
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| *not Pb and very poisonous materials
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| *
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| |- valign="top" align="left"
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| |More process info on TiO2
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| *[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
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| *
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| |-
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| |}
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| {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | | {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" |
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