Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide| C1: Anneal Oxide]] | [[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide| C1: Anneal Oxide]] | ||
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[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]] | [[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]] | ||
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[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]] | [[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]] | ||
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! | !General description | ||
| | |Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1. | ||
|Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | |||
|Annealing of almost materials on silicon wafer. | |||
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!Annealing gas | !Annealing gas | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
*Ar | |||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
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!Process | !Process temperature | ||
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*700 <sup>o</sup>C - 1100 <sup>o</sup>C | *700 <sup>o</sup>C - 1100 <sup>o</sup>C | ||
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* | *700 <sup>o</sup>C - 1150 <sup>o</sup>C | ||
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*20 <sup>o</sup>C - 1000 <sup>o</sup>C | *20 <sup>o</sup>C - 1000 <sup>o</sup>C | ||
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!Substrate and Batch size | !Substrate and Batch size | ||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
*1-30 150 mm wafers | *1-30 150 mm wafers | ||
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*Small samples on carrier wafer, horizontal | *Small samples on carrier wafer, horizontal | ||
*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
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*Small samples on carrier wafer, horizontal | *Small samples on carrier wafer, horizontal | ||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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All processed wafers have to be RCA cleaned. | All processed wafers have to be RCA cleaned. | ||
Except for wafers from LPCVD | |||
Except for wafers from LPCVD furnaces and PECVD1. | |||
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All wafers have to be RCA cleaned. | All wafers have to be RCA cleaned. | ||
Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum. | Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum. | ||
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Almost all materials, permission is need. | |||
Almost all | |||
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Revision as of 14:23, 19 March 2014
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Annealing
At Danchip we have seven furnaces and an RTP for annealing: A1, A3, C1, C2, C3, C4, noble furnace and RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.
- Anneal with N2 can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
- Wet anneal with H2O in a bubbler can be done in furnaces:C1 and C3.
Comparison of the seven annealing equipments
A1 Boron drive-in |
A3 Phosphorous drive-in |
C1 Anneal oxide |
C3 Anneal bond |
C4 Anneal aluminium |
Nobel furnace | RTP | |
General description | Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation. | Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation. | Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers. | Annealing and oxidation of wafers from NIL. | Annealing of wafers with aluminium. | Annealing and oxidation of any material. | Rapid thermal annealing. |
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Annealing with N2 | x | x | x | x | x | x | x |
Wet annealing with bubler (water steam + N2) | . | . | x | x | . | . | . |
Process temperature [ oC ] | 800-1150 | 800-1150 | 800-1150 | 800-1150 | 800-1150 | 22-1000oC | 22-1000oC |
Batch size | max. 30 wafers of 4" or 2" | max. 30 4" wafers or 2" wafers | max. 30 wafers of 6",4" or 2" | max. 30 4" wafers or 2" wafers | max. 30 4" wafers or 2" wafers | 30x4" or small pieces | 1x4" or small pieces |
Which wafers are allowed to enter the furnace: | A1 Boron drive-in |
A3 Phosphorous drive-in |
C1 Anneal oxide |
C3 Anneal bond |
C4 Anneal aluminium |
Nobel | RTP |
New clean* Si wafers 4" (6" in C1) | . | . | . | x | x | x | x |
RCA clean** Si wafers with no history of Metals on | x | x | x | x | x | x | x |
From Predep furnace directly (e.g. incl. Predep HF**) | From A2 | From A4 | x | x | x | x | x |
Wafers directly from PECVD1 | . | . | x | x | x | x | x |
Wafers directly from NIL bonding | . | . | . | x | x | x | x |
Wafers with aluminium | . | . | . | . | x | x | . |
wafers with other metals | . | . | . | . | x | . | |
wafers with III-V materials | x |
*New clean: only right from the new clean box. It is not allowed to put them in another box first.
**These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.
Comparison of the seven oxidation furnaces
General description | Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1. | Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | Annealing of almost materials on silicon wafer. |
---|---|---|---|
Annealing gas |
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Process temperature |
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|
Substrate and Batch size |
|
|
|
Allowed materials |
All processed wafers have to be RCA cleaned. Except for wafers from LPCVD furnaces and PECVD1. |
All wafers have to be RCA cleaned. Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum. |
Almost all materials, permission is need. |