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Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

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PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methodes:
PolySilicon can be deposited in several Danchip tools. Either it can be sputtered or be deposited in the PolySilicon furnace. In the chart below you can compare the two different deposition methods:
 




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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! Sputter([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD pSi]])
! Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD pSi]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
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*undoped, boron doped:~100Å/min
*undoped, boron doped:~100Å/min
*Phospher doped:~20Å/min
*Phospher doped:~20Å/min
|.
|
Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
In the order of 1 Å/s, but dependendt on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
| About 6-8 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]
| About 6-8 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]
|2Å/s to 15Å/s
|2Å/s to /s (see below).


|-
|-
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! Allowed substrates  
! Allowed substrates  


|Pyrex, fused silica, silicon, metals, oxide, nitride
|  
* Silicon wafers
* Quartz wafers
* Pyrex wafers
|Fused silica, Silicon, oxide, nitride
|Fused silica, Silicon, oxide, nitride
|Pyrex, fused silica, silicon, metals, oxide, nitride
|  
* Silicon wafers
* Quartz wafers
* Pyrex wafers
|.
|.
|
|
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* Any metals  
* Any metals  
|
|
|   
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
|
* Silicon, silicon oxides, silicon nitrides
* Metals from the +list
* Metals from the -list
* Alloys from the above list
* Stainless steel
* Glass
* III-V materials
* Resists
* Polymers
* Capton tape
|     
|     
* Silicon oxide
* Silicon oxide
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|
|
|  
|  
|
| The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD.
| This process is not running really stable nowadays.
| This process is not running really stable nowadays.


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== Sputtered Silicon in the Alcatel==
== Sputtered Silicon in the Alcatel==
{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
|-style="background:silver; color:black"
!The parameter(s) changed   
!The parameter(s) changed   
!New value(s)
!New value(s)
!Deposition rate
!Deposition rate
|-
|-
|-style="background:WhiteSmoke; color:black"
|Standard parameters
|Standard parameters
|None
|None
|
|
|-
|-
|-style="background:LightGrey; color:black"
|Power
|Power
|400W
|400W