Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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 |Oxidation of gate-oxide and other especially clean oxides.
 |Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.
-|Oxidation and annealing of 6" wafers. Oxidation of new wafer with out RCA cleaning. Annealing of wafers from the LPCVD furnaces and PECVD1.
+|Oxidation of 6" wafers. Oxidation of new wafer with out RCA cleaning. Oxidation of wafers from the LPCVD furnaces and PECVD1.
-|Oxidation and annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
+|Oxidation of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
 |Oxidation of very thick oxides, thickness higher than 4 µm.
-|Oxidation and annealing of almost materials on silicon wafer.
+|Oxidation of almost materials on silicon wafer.
 |-
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 !Oxidation method
 |
-*Dry: 5 SLM O<sub>2</sub>
+*Dry: O<sub>2</sub>
 *Wet: Torch
 |
-*Dry: 5 SLM O<sub>2</sub>
+*Dry: O<sub>2</sub>
 |
-*Dry: 5 SLM O<sub>2</sub>
+*Dry: O<sub>2</sub>
 *Wet: Torch
 |
-*Dry: 5 SLM O<sub>2</sub>
+*Dry: O<sub>2</sub>
 *Wet: Steamer
 |
-*Dry: 5 SLM O<sub>2</sub>
+*Dry: O<sub>2</sub>
 *Wet: Bobbler
 |
-*Dry: 5 SLM O<sub>2</sub>
+*Dry: O<sub>2</sub>
 *Wet: Bubbler
 |
-*Dry: 5 SLM O<sub>2</sub>
+*Dry: O<sub>2</sub>
 *Wet: Bubbler
 |-