Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
| Line 38: | Line 38: | ||
|Generel description - method 1 | |Generel description - method 1 | ||
|Plasma Enhanced Chemical Vapor Deposition has the advantach that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature. | |Plasma Enhanced Chemical Vapor Deposition has the advantach that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature. | ||
|Sputter deposition | |||
|. | |. | ||
| | |Sputter deposition | ||
|- | |- | ||
| Line 68: | Line 68: | ||
*~40nm - 30µm | *~40nm - 30µm | ||
| | | | ||
*Thin layers (up to 300-400 nm) | * Thin layers (up to 300-400 nm) | ||
| | | | ||
*~10nm - ~1µm(>2h) | *~10nm - ~1µm(>2h) | ||
| | | | ||
* | * Thin layers (up to 200-300 nm) | ||
|- | |- | ||